elektronische bauelemente SMG2306NE 3.5a , 30v , r ds(on) 58 m ? n-channel enhancement mode mos.fet 12-apr-2011 rev. b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. top view a l c b d g h j f k e 1 2 3 1 2 3 rohs compliant product a suffix of ?-c? specifies halogen and lead-free description these miniature surface mount mosfets utilize high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. features ? low r ds(on) provides higher efficiency and extends battery life. ? low gate charge ? fast switching ? miniature sc-59 surface mount package saves board space. application pwmdc-dc converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. package information package mpq leader size sc-59 3k 7? inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v i d @ t a =25 c 3.5 a continuous drain current 1 i d @ t a =70 c i d 2.8 a pulsed drain current 2 i dm 16 a continuous source current (diode conduction) 1 i s 1.25 a p d @ t a =25 c 1.3 w power dissipation 1 p d @ t a =70 c p d 0.8 w operating junction and st orage temperature range tj, tstg -55 ~ 150 c thermal resistance ratings t Q 10 sec 100 maximum junction to ambient 1 steady state r ? ja 166 c / w notes: 1 surface mounted on 1? x 1? fr4 board. 2 pulse width limited by maximum junction temperature. sc-59 millimete r millimete r ref. min. max. ref. min. max. a 2.70 3.10 g 0.10 ref. b 2.25 3.00 h 0.40 ref. c 1.30 1.70 j 0.10 0.20 d 1.00 1.40 k 0.45 0.55 e 1.70 2.30 l 0.85 1.15 f 0.35 0.50 esd protection diode 2kv
elektronische bauelemente SMG2306NE 3.5a , 30v , r ds(on) 58 m ? n-channel enhancement mode mos.fet 12-apr-2011 rev. b page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions static gate-threshold voltage v gs(th) 1.0 - - v v ds =v gs , i d =250 a gate-body leakage i gss - - 100 na v ds =0, v gs =20v - - 1 v ds =24v, v gs =0 zero gate voltage drain current i dss - - 25 a v ds =24v, v gs =0, t j = 55 c on-state drain current 1 i d(on) 6 - - a v ds =5v, v gs =10v - - 58 v gs =10v, i d =3.5a drain-source on-resistance 1 r ds(on) - - 82 m ? v gs =4.5v, i d =3a forward transconductance 1 g fs - 6.9 - s v ds =15v, i d =3.5a diode forward voltage v sd - 0.8 - v i s =2.3a, v gs = 0 dynamic 2 total gate charge q g - 2.2 - gate-source charge q gs - 0.5 - gate-drain charge q gd - 0.8 - nc v ds =15v, v gs =4.5v, i d =3.5a turn-on delay time t d(on) - 16 - rise time t r - 5 - turn-off delay time t d(off) - 23 - fall time t f - 3 - ns v dd =25v, v gen =10v, r l =25 ? , i d =1a notes: 1 pulse test pw Q 300 us duty cycle Q 2%. 2 guaranteed by design, not s ubject to production testing.
elektronische bauelemente SMG2306NE 3.5a , 30v , r ds(on) 58 m ? n-channel enhancement mode mos.fet 12-apr-2011 rev. b page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
elektronische bauelemente SMG2306NE 3.5a , 30v , r ds(on) 58 m ? n-channel enhancement mode mos.fet 12-apr-2011 rev. b page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
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